2SB786 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB786 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0. Minimum Lot-.

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Datasheet Specifications

Part number: 2SB786
Manufacturer: INCHANGE
File Size: 178.81 KB
Datasheet: 2SB786-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2

2SB786 Distributors

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2SB786 PNP Transistor INCHANGE

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