Datasheet4U Logo Datasheet4U.com

2SB786 PNP Transistor

2SB786 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB786 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -0. Minimum Lot-.

2SB786 Applications

* Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2

📥 Download Datasheet

Preview of 2SB786 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB786
Manufacturer
INCHANGE
File Size
178.81 KB
Datasheet
2SB786-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB788 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB789 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB789A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB703 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB705A - Silicon PNP Power Transistors (SavantIC)
  • 2SB705B - Silicon PNP Power Transistors (SavantIC)
  • 2SB706 - PNP/NPN SILICON TRANSISTOR (ETC)
  • 2SB706A - PNP/NPN SILICON TRANSISTOR (ETC)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB786-like datasheet