2SC1050 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SC1050

Manufacturer:

INCHANGE

File Size:

172.83kb

Download:

📄 Datasheet

Description:

Npn transistor.

With TO-3 Package

High breakdown voltage

100% avalanche tested

Minimum Lot-to-Lot variations for

2SC1050 Application

• Applications
• Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purpose ABSOLU

TAGS

2SC1050

INCHANGE

📁 Related Datasheet

2SC1050 - Silicon NPN Power Transistors (SavantIC)
Product Specification Silicon NPN Power Transistors .jmnic. 2SC1050 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use .

2SC1051 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors .. 2SC1051 DESCRIPTION ·With TO-3 package ·Wide area o.

2SC1051 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1051 DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minim.

2SC1000 - Silicon NPN Transistor (Toshiba)
.

2SC1000 - Silicon NPN Transistor (ETC)
.

2SC1001 - SILICON NPN TRANSISTOR (Toshiba)
:) SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS FEATURES . Output Power : P =l. 2W(Min. (f=470MHz, VCC=12.6V, I»i=0.3W) U.

2SC1002 - Silicon NPN Power Transistors (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1002 DESCRIPTION ·With TO-66 package ·High voltage ·High transition .

2SC1004 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors .. 2SC1004 DESCRIPTION ·With TO-3 package ·High breakd.

2SC1004 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1004 DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minim.

2SC1008 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 700 mA) ·Minimum Lot-to-Lot variations for robust device .