2SC1755 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min). DC Current Gain- : hFE= 40-200 @IC= 10mA, VCE= 10V. High Current-Gain Ban.

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Datasheet Specifications

Part number: 2SC1755
Manufacturer: INCHANGE
File Size: 192.05 KB
Datasheet: 2SC1755-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for color TV chroma, video , audio output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 200 mA ICM Coll

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2SC1755 NPN Transistor INCHANGE

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