2SC2579 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SC2579
Manufacturer: INCHANGE
File Size: 197.96 KB
Datasheet: 2SC2579-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous

2SC2579 Distributors

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2SC2579 NPN Transistor INCHANGE

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