2SC2510A Datasheet - Toshiba Semiconductor

2SC2510A Silicon NPN epitaxial planar type Transistor

2SC2510A www.DataSheet4U.com TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12.2dB (Min.) : ηC = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-E.

2SC2510A_ToshibaSemiconductor.pdf