2SC2551 Datasheet - Toshiba Semiconductor

2SC2551 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 2SC2551 Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Industrial Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complementary to 2SA1091. Absolute Maximum Ratings (Ta = 25°C) Characte.

2SC2551_ToshibaSemiconductor.pdf