2SC2550 Silicon NPN Transistor

Toshiba

Description

: I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC2550 HIGH FREQUENCY AMPLIFIER APPLICATIONS.HIGH SPEED SWITCHING APPLICA.

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Datasheet Specifications

Part number: 2SC2550
Manufacturer: Toshiba ↗
File Size: 122.17 KB
Datasheet: 2SC2550-Toshiba.pdf
Description: Silicon NPN Transistor

Features

* . High Breakdown Voltage : VCEO=50V, VEB0=8V
* High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA
* Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2fe.54 MAXIMUM RATINGS fTa=25°r. ^ CHARACTERISTIC Collector-Base Voltage Collector-Emitt

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Silicon NPN Transistor Toshiba

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