2SC2580 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SC2580
Manufacturer: INCHANGE
File Size: 198.07 KB
Datasheet: 2SC2580-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @

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2SC2580 NPN Transistor INCHANGE

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