2SC2582 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min). Good Linearity of hFE. High Collector Power Dissipation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SC2582
Manufacturer: INCHANGE
File Size: 192.15 KB
Datasheet: 2SC2582-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Co

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2SC2582 NPN Transistor INCHANGE

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