Datasheet4U Logo Datasheet4U.com

2SC3298 NPN Transistor

2SC3298 Description

isc Silicon NPN Power Transistors 2SC3298/A/B .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B. C.

2SC3298 Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298 160 V 2SC3298A 180 2SC3298B 200 2SC3298 160 VCEO Collector-Emitter Voltage 2SC3298A 180 V 2SC3298B 200

📥 Download Datasheet

Preview of 2SC3298 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SC3298
Manufacturer
INCHANGE
File Size
211.24 KB
Datasheet
2SC3298-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3298A - Silicon NPN Transistor (Toshiba)
  • 2SC3298B - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC3292 - NPN Transistor (Sanyo Semicon Device)
  • 2SC3293 - NPN Transistor (Sanyo Semicon Device)
  • 2SC3294 - NPN Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3295 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC3296 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3297 - Silicon NPN Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3298-like datasheet