2SC3298B NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min). Complement to Type 2SA1306B. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SC3298B
Manufacturer: INCHANGE
File Size: 210.61 KB
Datasheet: 2SC3298B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298B 200 V VCEO Collector-Emitter Voltage 2SC3298B 200 V VEBO Emitter-Base Voltage IC Collector Current-Continu

2SC3298B Distributors

📁 Related Datasheet

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2SC3298B NPN Transistor INCHANGE

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