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2SC3309 Datasheet - INCHANGE

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2SC3309 NPN Transistor

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device p.

2SC3309-INCHANGE.pdf

Preview of 2SC3309 PDF

Datasheet Details

Part number:

2SC3309

Manufacturer:

INCHANGE

File Size:

192.10 KB

Description:

NPN Transistor

Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Coll

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