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2SC4106 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min. High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number
2SC4106
Manufacturer
INCHANGE
File Size
209.26 KB
Datasheet
2SC4106-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14

2SC4106 Distributors

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NPN Transistor INCHANGE
INCHANGE 2SC4106-like datasheet