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2SC4139 NPN Transistor

2SC4139 Description

isc Silicon NPN Power Transistor 2SC4139 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

2SC4139 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 15 A ICM C

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Datasheet Details

Part number
2SC4139
Manufacturer
INCHANGE
File Size
209.19 KB
Datasheet
2SC4139-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC4139-like datasheet