2SC4153 - NPN Transistor
*Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) *Good Linearity of hFE *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed