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2SC4157 NPN Transistor

2SC4157 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4157 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot vari.

2SC4157 Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base voltage 8 V IC Coll

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Datasheet Details

Part number
2SC4157
Manufacturer
INCHANGE
File Size
182.54 KB
Datasheet
2SC4157-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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