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2SC4162 Silicon NPN Power Transistor

2SC4162 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4162 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation. 100% avalanche tested.

2SC4162 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Co

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Datasheet Details

Part number
2SC4162
Manufacturer
INCHANGE
File Size
189.99 KB
Datasheet
2SC4162-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2SC4162-like datasheet