2SC4169 Datasheet - Sanyo Semicon Device

2SC4169 NPN Epitaxial Planar Silicon Transistor

2SC4169 Features

* On-chip Zener diode of 60±10V between collector and base.

* Uniformity in collector-to-base voltage.

* High DC current gain : hFE=1000 min (VCE=5V, IC=500mA).

* Wide ASO.

* High inductive load handling capability : Es/b=15mJ (min). 6.0 3.0 14.0 8.5 [2SC4169] 6.0 5.0 4.7 0.5 0

Datasheet Details

2SC4169

Sanyo Semicon Device

34.53 KB

Npn epitaxial planar silicon transistor.

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