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2SC4163 NPN Transistor

2SC4163 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation. 100% avalanche tested.

2SC4163 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Co

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Datasheet Details

Part number
2SC4163
Manufacturer
INCHANGE
File Size
186.42 KB
Datasheet
2SC4163-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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