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2SC4517 NPN Transistor

2SC4517 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4517 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variation.

2SC4517 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Col

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Datasheet Details

Part number
2SC4517
Manufacturer
INCHANGE
File Size
179.48 KB
Datasheet
2SC4517-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC4517-like datasheet