Datasheet4U Logo Datasheet4U.com

2SC4706 - NPN Transistor

2SC4706 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

2SC4706 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 14 A ICM Co

📥 Download Datasheet

Preview of 2SC4706 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC4706
Manufacturer
INCHANGE
File Size
214.94 KB
Datasheet
2SC4706-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC4702 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SC4704 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC4705 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC4707 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC4709 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC4710 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC4713K - Transistor (Rohm)
  • 2SC4714 - NPN Transistor (Panasonic)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC4706-like datasheet