* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max.
* High VEBO : VEBO≥15V.
* Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6 0.4 0.5 32 1.5 1 3.0 0.75 Sp
2SC4705
Sanyo Semicon Device
100.21 KB
Npn transistor.
Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications.
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