2SC4705 Datasheet - Sanyo Semicon Device

2SC4705 NPN TRANSISTOR

2SC4705 Features

* High DC current gain (hFE=800 to 3200).

* Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max.

* High VEBO : VEBO≥15V.

* Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6 0.4 0.5 32 1.5 1 3.0 0.75 Sp

Datasheet Details

2SC4705

Sanyo Semicon Device

100.21 KB

Npn transistor.

📁 Related Datasheet

2SC4702 NPN TRANSISTOR (Hitachi Semiconductor)

2SC4702 NPN Transistor (Renesas)

2SC4702 NPN Transistor (Kexin)

2SC4703 NPN Transistor (INCHANGE)

2SC4703 NPN TRANSISTOR (NEC)

2SC4703 NPN SILICON RF TRANSISTOR (CEL)

2SC4704 Silicon NPN Transistor (Hitachi Semiconductor)

2SC4705 NPN Epitaxial Planar Silicon Transistor (Kexin)

TAGS

2SC4705 NPN TRANSISTOR Sanyo Semicon Device

2SC4705 Distributor