* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max.
* High VEBO : VEBO≥15V.
* Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6 0.4 0.5 32 1.5 1 3.0 0.75 Sp
2SC4705
Sanyo Semicon Device
100.21 KB
Npn transistor.
Ordering number:EN3484
NPN Epitaxial Planar Silicon Transistor
2SC4705
Low-Frequency General-Purpose Amplifier, Applications (High hFE)
Applications.
📁 Related Datasheet
2SC4702 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ.
Outli.
2SC4702 - NPN Transistor
(Renesas)
2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage VCEO = 300 V
• Small Cob Cob = 1.5 pF Typ.
Outline
.
2SC4702 - NPN Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC4702
SOT-23
Transistors
Unit: mm
Features
High breakdown voltage
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
Small C.
2SC4703 - NPN Transistor
(INCHANGE)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC4703
DESCRIPTION ·Low Distortion at Low Supply Voltage.
IM2- 55 dB TYP., IM3- 76 dB TYP. @VC.
2SC4703 - NPN TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC4703
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4703 is des.
2SC4703 - NPN SILICON RF TRANSISTOR
(CEL)
NPN SILICON RF TRANSISTOR
NE46234 / 2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
DESC.
2SC4704 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC4704
Silicon NPN Epitaxial High Frequency Amplifier
Feature
• Excellent high frequency characteristics fT = 300 MHz typ
• High voltage and low out.
2SC4705 - NPN Epitaxial Planar Silicon Transistor
(Kexin)
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4705
Features
High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.
