2SD1562 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min). Wide Area of Safe Operation. Complement to Type 2SB1085. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2SD1562
Manufacturer: INCHANGE
File Size: 208.92 KB
Datasheet: 2SD1562-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A ICM Collector C

2SD1562 Distributors

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2SD1562 NPN Transistor INCHANGE

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