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2SD1562 NPN Transistor

2SD1562 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min). Wide Area of Safe Operation. Complement to Type 2SB1085. Minimum Lot-to-.

2SD1562 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A ICM Collector C

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Datasheet Details

Part number
2SD1562
Manufacturer
INCHANGE
File Size
208.92 KB
Datasheet
2SD1562-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1562-like datasheet