2SD1566 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1566 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Fast Sw.

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Datasheet Specifications

Part number: 2SD1566
Manufacturer: INCHANGE
File Size: 194.98 KB
Datasheet: 2SD1566-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continu

2SD1566 Distributors

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2SD1566 NPN Transistor INCHANGE

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