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2SD768 NPN Transistor

2SD768 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD768 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Low Collector-Emitter Satur.

2SD768 Applications

* Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak P

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Datasheet Details

Part number
2SD768
Manufacturer
INCHANGE
File Size
202.04 KB
Datasheet
2SD768-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD768-like datasheet