2SD768 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD768 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Low Collector-Emitter Satur.

📥 Download Datasheet

2SD768 Datasheet Preview — Preview of 2SD768 PDF

Datasheet Specifications

Part number: 2SD768
Manufacturer: INCHANGE
File Size: 202.04 KB
Datasheet: 2SD768-INCHANGE.pdf
Description: NPN Transistor

Applications

* Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak P

2SD768 Distributors

📁 Related Datasheet

2SD768K 2SD761 2SD762 2SD762A 2SD700 2SD703A

📌 All Tags

2SD768 NPN Transistor INCHANGE

INCHANGE 2SD768-like datasheet