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2SD783 - NPN Transistor

2SD783 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD783 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Low collector saturation voltage. Minimum Lot-to-Lot variations fo.

2SD783 Applications

* Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector

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Datasheet Details

Part number
2SD783
Manufacturer
INCHANGE
File Size
175.66 KB
Datasheet
2SD783-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD783-like datasheet