2SD780A - NPN EPITAXIAL SILICON TRANSISTOR
2SD780A Features
* Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR TPCM: 0.2 W (Tamb=25℃) 1. 02 .,LCollector current 0. 95¡ À0. 025 0. 35 2. 92¡ À0. 05 ICM: 0.3 Collector-base voltage A OV(BR)CBO: V(BR)CBO: 60 V 2SD780 80 V 2SD780A 1. 9 COperating and storage junction temperature range
