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2SD2908 NPN EPITAXIAL SILICON TRANSISTOR

2SD2908 Description

RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) D.

2SD2908 Features

* Power dissipation TPCM: 0.5 W (Tamb=25℃) . ,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise sp

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Datasheet Details

Part number
2SD2908
Manufacturer
WEJ
File Size
73.74 KB
Datasheet
2SD2908-WEJ.pdf
Description
NPN EPITAXIAL SILICON TRANSISTOR

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NPN EPITAXIAL SILICON TRANSISTOR WEJ
WEJ 2SD2908-like datasheet