2SD291 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD291 .
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min). Collector Power Dissipation- : PC= 18W @TC= 25℃. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SD291
Manufacturer: INCHANGE
File Size: 177.06 KB
Datasheet: 2SD291-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IC

2SD291 Distributors

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2SD291 NPN Transistor INCHANGE

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