2SD297 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD297 .
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min). Collector Power Dissipation- : PC= 25W @TC= 25℃. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SD297
Manufacturer: INCHANGE
File Size: 177.11 KB
Datasheet: 2SD297-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IC

2SD297 Distributors

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2SD297 NPN Transistor INCHANGE

INCHANGE 2SD297-like datasheet