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2SD1781K - NPN EPITAXIAL SILICON TRANSISTOR

2SD1781K Description

RoHS 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR (NPN) D.

2SD1781K Features

* Power dissipation TPCM: . ,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡

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Datasheet Details

Part number
2SD1781K
Manufacturer
WEJ
File Size
136.36 KB
Datasheet
2SD1781K-WEJ.pdf
Description
NPN EPITAXIAL SILICON TRANSISTOR

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NPN EPITAXIAL SILICON TRANSISTOR WEJ
WEJ 2SD1781K-like datasheet