2SD1781K - NPN EPITAXIAL SILICON TRANSISTOR
2SD1781K Features
* Power dissipation TPCM: .,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡
