Part number:
2SD1782K
Manufacturer:
File Size:
1.17 MB
Description:
Power transistor.
* 1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=0.5A/50mA) 2)High breakdown voltage. BVCEO=80V 3)Complements the 2SB1198K lOutline SMT3 Datasheet 2SD1782K SOT-346 lInner circuit lApplication DRIVER lPackaging specifications Part No. Package 2SD1782K SMT3 Package siz
2SD1782K
1.17 MB
Power transistor.
📁 Related Datasheet
2SD1782 - NPN SILICON TRANSISTOR
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2SD1782
NPN EPITAXIAL SILICON TRANSISTOR
POWER NPN TRANSISTOR
DESCRIPTION
The UTC 2SD1782 is an NPN silicon trans.
2SD1782 - Medium Power Transistor
(GME)
Medium Power Transistor
FEATURES
z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA)
z High VCEO, VCEO=80V z Complements the 2SB1198K.
Pb
Lea.
2SD1782 - NPN Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD1782 TRANSISTOR (NPN)
FEATURES z Low VCE(sat) z High BVC.
2SD1782K - Power Transistor
(Kexin)
SMD Type
TransistIoCrs
Power Transistor 2SD1782K
Features
Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA High VCEO, VCEO=80V.
+0.12.4 -0..
2SD1780 - NPN SILICON TRANSISTOR
(NEC)
.
2SD1781 - NPN Silicon Transistor
(SeCoS)
Elektronische Bauelemente
2SD1781
0.8A, 40V NPN Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & .
2SD1781K - Medium Power Transistor
(Rohm)
2SD1781K
Medium Power Transistor (32V, 800mA)
Parameter
VCEO IC
Value
32V 800mA
lFeatures
1)Very low VCE(sat). VCE(sat)=0.1V(Typ.) (IC/IB=500mA/.
2SD1781K - NPN EPITAXIAL SILICON TRANSISTOR
(WEJ)
RoHS 2SD1781K
SOT-23-3L
2SD1781K TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: .,LCollector current
200 mW (Tamb=25℃)
1. 9
0. 95¡ À0. 025
.
