2SD1783 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1783 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 2A. Low Saturation Voltage. Min.

📥 Download Datasheet

2SD1783 Datasheet Preview — Preview of 2SD1783 PDF

Datasheet Specifications

Part number: 2SD1783
Manufacturer: INCHANGE
File Size: 181.55 KB
Datasheet: 2SD1783-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP

2SD1783 Distributors

📁 Related Datasheet

2SD1780 2SD1781 2SD1781K 2SD1781KFRA 2SD1781KR 2SD1782

📌 All Tags

2SD1783 NPN Transistor INCHANGE

INCHANGE 2SD1783-like datasheet