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2SD1783 NPN Transistor

2SD1783 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1783 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 2000(Min) @IC= 2A. Low Saturation Voltage. Min.

2SD1783 Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP

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Datasheet Details

Part number
2SD1783
Manufacturer
INCHANGE
File Size
181.55 KB
Datasheet
2SD1783-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1783-like datasheet