Datasheet4U Logo Datasheet4U.com

2SD1783 - NPN Transistor

📥 Download Datasheet

Preview of 2SD1783 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SD1783
Manufacturer INCHANGE
File Size 181.55 KB
Description NPN Transistor
Datasheet download datasheet 2SD1783-INCHANGE.pdf

2SD1783 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 2A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V

📁 2SD1783 Similar Datasheet

  • 2SD1780 - NPN SILICON TRANSISTOR (NEC)
  • 2SD1781 - NPN Silicon Transistor (SeCoS)
  • 2SD1781K - Medium Power Transistor (Rohm)
  • 2SD1781KFRA - Medium Power Transistor (ROHM)
  • 2SD1781KR - GENERAL PURPOSE TRANSISTORS (AiT Components)
  • 2SD1782 - NPN SILICON TRANSISTOR (Unisonic Technologies)
  • 2SD1782K - Power Transistor (Rohm)
  • 2SD1784 - NPN Transistor (Toshiba Semiconductor)
Other Datasheets by INCHANGE
Published: |