2SD795 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max) @IC= 2.0A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio frequency power amplifier and low
