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2SD797 NPN Transistor

2SD797 Description

isc Silicon NPN Power Transistor 2SD797 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). High Power Dissipation. High Current Capability. Minimum Lot-to-Lot varia.

2SD797 Applications

* High power amplifier applications.
* High Power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter

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Datasheet Details

Part number
2SD797
Manufacturer
INCHANGE
File Size
199.91 KB
Datasheet
2SD797-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD797-like datasheet