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2SD797 Datasheet - INCHANGE

2SD797 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) *High Power Dissipation *High Current Capability *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High power amplifier applications. *High Power switching applications.

2SD797-INCHANGE.pdf

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Datasheet Details

Part number:

2SD797

Manufacturer:

INCHANGE

File Size:

199.91 KB

Description:

Npn transistor.

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