2SD798 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 2. High D.

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Datasheet Specifications

Part number: 2SD798
Manufacturer: INCHANGE
File Size: 208.68 KB
Datasheet: 2SD798-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high-voltage switching igniter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Cu

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2SD798 NPN Transistor INCHANGE

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