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2SD799 NPN Transistor

2SD799 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min. High DC Current Gain : hFE= 600(Min. Minimum Lot-to-Lot variation.

2SD799 Applications

* Igniter applications.
* High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Cu

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Datasheet Details

Part number
2SD799
Manufacturer
INCHANGE
File Size
206.45 KB
Datasheet
2SD799-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD799-like datasheet