2SD799 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min. High DC Current Gain : hFE= 600(Min. Minimum Lot-to-Lot variation.

📥 Download Datasheet

2SD799 Datasheet Preview — Preview of 2SD799 PDF

Datasheet Specifications

Part number: 2SD799
Manufacturer: INCHANGE
File Size: 206.45 KB
Datasheet: 2SD799-INCHANGE.pdf
Description: NPN Transistor

Applications

* Igniter applications.
* High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Cu

2SD799 Distributors

📁 Related Datasheet

2SD792 2SD794 2SD794A 2SD796 2SD797 2SD798

📌 All Tags

2SD799 NPN Transistor INCHANGE

INCHANGE 2SD799-like datasheet