2SD986 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min. DC Current Gain- : hFE = 2000(Min) @ IC= 1A. Low Collector Saturatio.

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Datasheet Specifications

Part number: 2SD986
Manufacturer: INCHANGE
File Size: 207.89 KB
Datasheet: 2SD986-INCHANGE.pdf
Description: NPN Transistor

Applications

* They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continu

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2SD986 NPN Transistor INCHANGE

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