2SD993 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 10V(Max. Built-in Damper Diode.

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Datasheet Specifications

Part number: 2SD993
Manufacturer: INCHANGE
File Size: 201.26 KB
Datasheet: 2SD993-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Cu

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2SD993 NPN Transistor INCHANGE

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