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2SK3681 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
2SK3681
Manufacturer
INCHANGE
File Size
195.01 KB
Datasheet
2SK3681-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max)
* With low gate drive requirements
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 152 PD Total Dissipation 600 Tj Operating Junction Temperature -55~

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