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2SK368 Datasheet - Toshiba Semiconductor

2SK368 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: mm High breakdown voltage: VGDS = 100 V (min) High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V) Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD .

2SK368_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK368

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

141.64 KB

Description:

N-channel mosfet.

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2SK368 2SK368 N-Channel MOSFET Toshiba Semiconductor

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