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3CD834

PNP Transistor

3CD834 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
*Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use in audio frequency power amplif.

3CD834 Datasheet (216.45 KB)

Preview of 3CD834 PDF

Datasheet Details

Part number:

3CD834

Manufacturer:

INCHANGE

File Size:

216.45 KB

Description:

Pnp transistor.

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