3CD6D - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) *DC Current Gain- : hFE=10-180@IC= -2.5A *Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -2.5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power
