3CD3001 - TO-251 Plastic Encapsulate Transistors
3CD3001 Features
* Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base
