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3CD3001

TO-251 Plastic Encapsulate Transistors

3CD3001 Features

* Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base

3CD3001 Datasheet (31.96 KB)

Preview of 3CD3001 PDF

Datasheet Details

Part number:

3CD3001

Manufacturer:

Jiangsu Changjiang

File Size:

31.96 KB

Description:

To-251 plastic encapsulate transistors.

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3CD3001 TO-251 Plastic Encapsulate Transistors Jiangsu Changjiang

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