AOU4N60 Datasheet - INCHANGE

AOU4N60, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOU4N60 .
Designed for use in switch mode power supplies and general purpose applications.

Features

* Drain Current
* ID= 4A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) =2.3Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 104 W TJ Max. Operating Junction Temperatu

AOU4N60-INCHANGE.pdf