AOU412 Datasheet (Alpha & Omega Semiconductors)

AOU412, N-Channel MOSFET

The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications).

AOU412L is a Green Pro

AOU412 Features

* VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Re