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AOU412 N-Channel MOSFET

AOU412 Description

www.DataSheet4U.com AOU412 N-Channel Enhancement Mode Field Effect Transistor General .
The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

AOU412 Features

* VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Re

AOU412 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, L

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N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AOU412-like datasheet