AOU4S60 - N-Channel MOSFET

INCHANGE

AOU4S60 Datasheet Preview — Preview of AOU4S60 PDF

Datasheet Details

Part number	AOU4S60
Manufacturer	INCHANGE
File Size	269.61 KB
Description	N-Channel MOSFET
Datasheet	AOU4S60-INCHANGE.pdf

AOU4S60 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 16 A PD Total Dissipation @TC=25℃ 56.8 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re

Features

Drain Current.
ID=4A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jan 20, 2021 |