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AOU414 N-Channel MOSFET

AOU414 Description

www.DataSheet4U.com AOU414 N-Channel Enhancement Mode Field Effect Transistor General .
The AOU414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

AOU414 Features

* VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) Top View Drain Connected to Tab G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain

AOU414 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, L

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N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AOU414-like datasheet