B989 Silicon PNP Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor Product Specification 2SB989 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Vol.

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Datasheet Specifications

Part number: B989
Manufacturer: INCHANGE
File Size: 193.56 KB
Datasheet: B989-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Col

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B989 Silicon PNP Power Transistor INCHANGE

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