BD539A Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BD539A

Manufacturer:

INCHANGE

File Size:

186.65kb

Download:

📄 Datasheet

Description:

Npn transistor.

  • DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A
  • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
  • Com

  • Datasheet Preview: BD539A 📥 Download PDF (186.65kb)
    Page 2 of BD539A

    BD539A Application

    • Applications
    • Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU

    TAGS

    BD539A
    NPN
    Transistor
    INCHANGE

    📁 Related Datasheet

    BD539 - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
    BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

    BD539 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min).

    BD539A - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
    BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

    BD539B - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
    BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

    BD539B - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

    BD539C - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
    BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

    BD539C - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor BD539C DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

    BD539D - NPN SILICON POWER TRANSISTORS (Power Innovations Limited)
    BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q .

    BD539D - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor BD539D DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

    BD530 - PNP SILICON AMPLIFIER TRANSISTORS (Motorola Inc)
    .

    Stock and price

    part
    Bourns Inc
    TRANS NPN 60V 5A TO-220
    DigiKey
    BD539A-S
    0 In Stock
    0
    Unit Price : $0
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts