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BD539A

NPN Transistor

BD539A General Description


*DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
*Complement to Type BD540A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for use in medium power linear and switc.

BD539A Datasheet (186.65 KB)

Preview of BD539A PDF

Datasheet Details

Part number:

BD539A

Manufacturer:

INCHANGE

File Size:

186.65 KB

Description:

Npn transistor.

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BD539A NPN Transistor INCHANGE

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